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| NTE228A Silicon NPN Transistor High Voltage Amp, Video Output Description: The NTE228A is a silicon NPN transistor in a TO202M type package designed for high-voltage TV video and chroma output circuits, high-voltage linear amplifiers, and high-voltage transistor regulators. Features: D High Collector-Emitter Breakdown Voltage: V(BR)CEO = 350V (Min) @ IC = 1mA D Low Collector-Emitter Saturation Voltage: VCE(sat) = 600mV (Max) @ IC = 20mA D Low Collector-Emitter Capacitance: Ccb = 3pF (Max) @ VCB = 30V D 2 Watts Free Air Dissipation @ TA = +25C Absolute Maximum Ratings: Collector-Emitter Voltage, VCEO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 350V Collector-Base Voltage, VCBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 450V Emitter-Base Voltage, VEBO . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 6V Collector Current, IC Continuous . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 500mA Peak . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 700mA Base Current, IB . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 250mA Total Power Dissipation (TA = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 2W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 16mW/C Total Power Dissipation (TC = +25C), PD . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 10W Derate Above 25C . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 80mW/C Operating Junction Temperature Range, TJ . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Storage Temperature Range, Tstg . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . -55 to +150C Thermal Resistance, Junction-to-Ambient, RthJA . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 62.5C/W Thermal Resistance, Junction-to-Case, RthJC . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . . 12.5C/W Lead Temperature (During Soldering, 1/16" from case, 10sec), TL . . . . . . . . . . . . . . . . . . . . . +250C Electrical Characteristics: (TA = +25C unless otherwise specified) Parameter OFF Characteristics Collector-Emitter Breakdown Voltage Collector-Base Breakdown Voltage Emitter-Base Breakdown Voltage Collector Cutoff Current Emitter Cutoff Current V(BR)CEO IC = 1mA, IB = 0 V(BR)CBO IC = 100A, IE = 0 V(BR)EBO IE = 100A, IC = 0 ICBO IEBO VCB = 250V, IE = 0 VBE = 5V, IC = 0 350 450 6 - - - - - - - - - - 0.2 0.1 V V V A A Symbol Test Conditions Min Typ Max Unit Electrical Characteristics (Cont'd): (TA = +25C unless otherwise specified) Parameter ON Characteristics (Note 1) DC Current Gain hFE VCE(sat) VBE(on) fT Ccb IC = 1mA, VCE = 10V IC = 30mA, VCE = 10V Collector-Emitter Saturation Voltage IC = 30mA, IB = 3mA IC = 50mA, IB = 5mA Base-Emitter ON Voltage Dynamic Characteristics Current Gain-Bandwidth Product Collector-Base Capacitance IC = 10mA, VE = 20V, f = 20MHz VCB = 20V, IE = 0, f = 1MHz 45 - - - 200 3 MHz pF IC = 30mA 25 40 - - - - - - - - - 180 0.6 1.5 0.85 V V V Symbol Test Conditions Min Typ Max Unit Note 1. Pulse Test: Pulse Width 300s, Duty Cycle 2%. .394 (10.0) C .165 (4.2) Dia .492 (12.5) .335 (8.5) .197 (5.0) .059 (1.5) x 45 Chamf .119 (3.0) .138 (3.5) .335 (8.5) .532 (13.5) E B C .098 (2.5) .181 (4.6) |
Price & Availability of NTE228A
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